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By Institute of Electrical and Electronics Engineers

ISBN-10: 1424412447

ISBN-13: 9781424412440

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Extra info for 2007 2nd International Workshop on Advances in Sensors and Interface

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With the design of side-guard electrodes as described in Sec. 2, we can investigate the transport behavior of OTFTs in truly nanoscale dimensions excluding the spreading currents in large area, without the difficulty to pattern the semiconductor layer into such a small size as the channel length. More importantly, with these devices as chemical sensors, the side-guarding function ensures that the active sensing area is truly nansocale. This novel four-terminal geometric design provides a powerful capability to investigate the sensing behavior within the nanoscale active area through the defined channel without any undesirable background from large-scale parasitic conduction pathways around the channel.

10. The mobility turns out to be a function of the longitudinal field (increasing with the field) consistently throughout a wide range of scaled channel lengths for the same morphology of organic semiconductor layer deposited at a given fabrication batch. It is very important that the contacts do not influence the measured mobility. For each channel length, as the source-drain voltage magnitude is increased from zero, the devices are initially injection-limited. In this regime, the drain current increases exponentially with voltage, as is expected when charge is injected over a Schottky barrier.

Scaling Effects in Organic Transistors and Transistor-Based Chemical Sensors higher than the operating drain voltage (Vds, up to −5 V), which causes the FET to operate in the linear region. 046 cm2/(V ⋅ s), and the on/off ratio (at Vds = −5 V) is 97 for this device. The superlinear characteristics at the high Vg end are probably due to the possibility that channel resistance becomes small enough at high gate biases that contact resistance plays a role. The measured devices can be broadly classified into two groups.

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2007 2nd International Workshop on Advances in Sensors and Interface by Institute of Electrical and Electronics Engineers


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